收藏本站
NTMFS4897NF
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction ? to ? Case (Drain)
Junction ? to ? Ambient – Steady State (Note 1)
Junction ? to ? Ambient – Steady State (Note 2)
Junction ? to ? Ambient ? t v 10 sec
Symbol
R q JC
R q JA
R q JA
R q JA
Value
1.3
45.7
132.1
17.2
Unit
° C/W
1. Surface ? mounted on FR4 board using 1 sq ? in pad, 1 oz Cu.
2. Surface ? mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
Drain ? to ? Source Breakdown Voltage
Temperature Coefficient
V (BR)DSS
V (BR)DSS /
T J
V GS = 0 V, I D = 1.0 mA
30
28.5
V
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V,
V DS = 24 V
T J = 25 ° C
60
500
m A
Gate ? to ? Source Leakage Current
I GSS
V DS = 0 V, V GS = ± 20 V
± 100
nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
V GS(TH)
V GS = V DS , I D = 1.0 mA
1.5
2.0
2.5
V
Negative Threshold Temperature Coefficient
V GS(TH) /T J
4
mV/ ° C
Drain ? to ? Source On Resistance
R DS(on)
V GS = 10 V
V GS = 4.5 V
I D = 22 A
I D = 20 A
I D = 20 A
1.3
1.3
2.0
2.0
3.0
m W
I D = 18 A
2.0
Forward Transconductance
g FS
V DS = 15 V, I D = 15 A
90
S
CHARGES AND CAPACITANCES
Input Capacitance
C ISS
5660
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate ? to ? Source Charge
Gate ? to ? Drain Charge
Total Gate Charge
C OSS
C RSS
Q G(TOT)
Q G(TH)
Q GS
Q GD
Q G(TOT)
V GS = 0 V, f = 1 MHz, V DS = 15 V
V GS = 4.5 V, V DS = 15 V; I D = 23 A
V GS = 10 V, V DS = 15 V,
I D = 23 A
1150
495
40.2
6.4
15.3
13.4
83.6
pF
nC
nC
SWITCHING CHARACTERISTICS (Note 4)
Turn ? On Delay Time
t d(ON)
26
Rise Time
Turn ? Off Delay Time
Fall Time
t r
t d(OFF)
t f
V GS = 4.5 V, V DS = 15 V,
I D = 15 A, R G = 3.0 W
24
36
13
ns
3. Pulse Test: pulse width v 300 m s, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
2
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
NTMFS4899NFT3G MOSFET N-CH 30V 10.4A SO-8FL
NTMFS4921NT1G MOSFET N-CH 30V 8.8A SO8 FL
NTMFS4922NET1G MOSFET N-CH 30V 147A SO8-FL
NTMFS4923NET3G MOSFET N-CH 30V 91A SO-8FL
NTMFS4925NET1G MOSFET N-CH 30V 48A SO8-FL
NTMFS4925NT1G MOSFET N-CH 30V 9.7A SO-8FL
NTMFS4926NET1G MOSFET N-CH 30V 44A SO8-FL
NTMFS4926NT1G MOSFET N-CH 30V 9A SO-8FL
相关代理商/技术参数
NTMFS4897NFT3G 功能描述:MOSFET NFET SO8FL 30V 191A 2MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTMFS4898NF 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 117 A, Single N−Channel, SO−8FL
NTMFS4898NF_10 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 117 A, Single N−Channel, SO−8FL
NTMFS4898NFT1G 功能描述:MOSFET NFET SO8FL 30V 120A 3MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTMFS4898NFT3G 功能描述:MOSFET NFET SO8FL 30V 120A 3MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTMFS4899NF 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 75 A, Single N−Channel, SO−8 FL
NTMFS4899NFT1G 功能描述:IGBT 晶体管 NFET SO8FL 30V 75A 5MOHM RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube
NTMFS4899NFT3G 功能描述:IGBT 晶体管 NFET SO8FL 30V 75A 5MOHM RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube